Analysis of Antimony Doping in Tin Oxide Thin Films Obtained by the Sol-Gel Method

The antimony doping in SnO₂ thin films prepared by the sol-gel dip-coating method has been studied using two characterization techniques. In order to determine the actual doping level directly in the deposited layers, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) have been used. We found that this doping level is systematically lower than expected from the starting solutions composition, and that two oxidation states are present: Sb³⁺ and Sb⁵⁺. As the antimony content increases, there is a competition between Sb⁵⁺ and Sb³⁺ species.The SnO₂: Sb thin films have also been observed by transmission electron microscopy (TEM), showing that the measured mean size of crystallites decreases as the Sb content increases in the oxide. No precipitates of either Sn or Sb oxides (other than SnO₂) could be detected.