Power factor enhancement in Pr-substituted alloys prepared by high-pressure sintering |
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Authors: | R.J. Huang L.F. Li W. Xu L.H. Gong |
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Affiliation: | aThe Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, P.O. Box 2711, Beijing, 100190, PR China;bGraduate University of Chinese Academy of Sciences, Beijing, 100039, PR China |
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Abstract: | Bi85Sb15−xPrx (x=0,1,2,3) alloys with partial substitution of Pr for Sb were synthesized by mechanical alloying followed by high-pressure sintering. The crystal structure was characterized by X-ray diffraction. The electrical conductivity and Seebeck coefficient were measured in the temperature range of 80–300 K. The results show that the electrical conductivity and Seebeck coefficient of Pr-substituted samples are both larger than those of the reference sample, Bi85Sb15, in the whole measurement temperature range. The power factor of Bi85Sb13Pr2 reaches a maximum value of 3.83×10−3 W K−2 m−1 at 235 K, which is about four times larger than that of the reference sample, Bi85Sb15, at the same temperature. |
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Keywords: | A. Semiconductors D. Electronic transport E. High pressure |
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