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UV absorption of RbAg4I5-RE (Sm, Yb) thin-film systems
Authors:A L Despotuli  L A Matveeva
Institution:(1) Institute of Microelectronics and Ultrapure Materials Technology, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia
Abstract:UV spectra of samples prepared by vacuum deposition of Sm and Yb thin films on 100–200-nm thick films of the RbAg4I5 solid electrolyte (SE) at 300–350 K contain strong absorption bands peaking at about 4.3 and 5.0 eV. After deposition of ~5 nm of Sm, the ionic conductivity σ of the samples decreases from σ 0 to ≈0.9 σ 0, and the SE lattice parameter, from 11.24 to ≈11.15 Å, with the x-ray reflection halfwidth increasing from 0.5 to 0.8°. Further growth of Sm concentration in the samples changes the x-ray diffraction pattern, the absorption at 4.3 and 5.0 eV increases, a new absorption edge forms at 3.8 eV, and σ decreases down to ~10?2 σ 0. It is conjectured that the strong UV absorption bands in heavily defected silver halides of the RbAg4I5-Sm(Yb) system is genetically related to the 4d 10→4d 95s electronic transitions in free Ag+ ions.
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