0.2 μm AlSb/InAs HEMTs with 5 V gate breakdown voltage |
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| Authors: | Boos J.B. Kruppa W. Park D. Shanabrook B.V. Bennett B.R. |
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| Affiliation: | Naval Res. Lab., Washington, DC; |
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| Abstract: | DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.21 μm are reported. The reverse gate characteristics exhibit relatively low gate leakage current and gate-drain breakdown voltages as high as 5 V. Equivalent circuit modelling yields an fT of 110 GHz after removal of the gate bonding pad capacitance. The bias dependence of fmax is examined indicating a significant reduction in the unilateral gain due to impact ionisation |
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