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镱铒共掺Al2O3薄膜上转换机理及其温度特性
引用本文:李成仁,明成国,李淑凤,丁建华,王宝成,张 丽.镱铒共掺Al2O3薄膜上转换机理及其温度特性[J].物理学报,2008,57(10):6604-6608.
作者姓名:李成仁  明成国  李淑凤  丁建华  王宝成  张 丽
作者单位:(1)大连理工大学物理与光电工程学院,大连 116024; (2)辽宁师范大学物理与电子技术学院,大连 116029
基金项目:辽宁省科技厅基金(批准号:20062137)资助的课题.
摘    要:采用中频磁控溅射法制备了镱铒共掺Al2O3薄膜,铒镱掺杂浓度分别为0.3%,3.6%(摩尔分数,全文同).讨论了三价铒离子529nm和549nm光致发光的上转换机理.在291.8—573.3K温度区间测量了两绿上转换光谱荧光强度比的温度特性,拟合表达式为R=5.37exp(-738/T).366 K温度时灵敏度最大,为0.0039 K-1.结果表明镱铒共掺Al2O3薄膜适合作为小型、高温和高灵敏的光学温度传感材料. 关键词: 2O3薄膜')" href="#">镱铒共掺Al2O3薄膜 中频磁控溅射 上转换 荧光强度比

关 键 词:镱铒共掺Al2O3薄膜  中频磁控溅射  上转换  荧光强度比
收稿时间:2008-02-26
修稿时间:5/8/2008 12:00:00 AM

Up-conversion mechanisms of Yb-Er co-doped Al2O3 film and its temperature characteristics
Li Cheng-Ren,Ming Cheng-Guo,Li Shu-Feng,Ding Jian-Hu,Wang Bao-Cheng and Zhang Li.Up-conversion mechanisms of Yb-Er co-doped Al2O3 film and its temperature characteristics[J].Acta Physica Sinica,2008,57(10):6604-6608.
Authors:Li Cheng-Ren  Ming Cheng-Guo  Li Shu-Feng  Ding Jian-Hu  Wang Bao-Cheng and Zhang Li
Abstract:Yb-Er co_doped Al2O3 film was prepared on SiO2/Si substrate using a medium frequency magnetron sputtering system, and the concentrations of dopant Er and Yb ions were 0.3% and 3.6%, respectively. The up-conversion mechanisms of Er3+ photoluminescence at 529 and 549nm were discussed. The fluorescence intensity ratio of the green up-conversion spectra were measured in the temperature range of 291.8—573.3K, and the temperature characteristics were fitted as R=5.37exp(-738/T). At the temperature of 366K, the sensitivity has the maximum value of 0.0039 K-1. The results show that the Yb∶Er∶Al2O3 film is a suitable material for minitype, high-sensitivity and high-temperature optical sensors.
Keywords:Yb∶Er∶Al2O3 co-doped film  medium frequency magnetron sputter  up-conversion  fluorescence intensity ratio
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