Modelling of the influence of interelectronic interaction on the stationary characteristics of a resonant tunnel diode with spacer layers |
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Authors: | V F Elesin M A Remnev and I Yu Kateev |
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Institution: | (1) Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu Tokyo, 182-8585, Japan |
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Abstract: | The influence of the interelectronic interaction on the stationary characteristics of a resonant tunnel diode (RTD) with spacer
layers (spacers) is investigated by means of a self-consistent solution to Schr?dinger and Poisson equations. It is demonstrated
that the interelectronic interaction influences significantly the RTD voltampere characteristics, in particular, it decreases
the peak current density and displaces the position of maxima of the peak current dependence on the emitter spacer size. It
is also demonstrated that the hysteresis of the RTD volt-ampere characteristics vanishes for definite spacer sizes. |
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