| 漂移-扩散型半导体方程解的整体有界性 |
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| 引用本文： | 郭秀兰,张玉兰,李功胜. 漂移-扩散型半导体方程解的整体有界性[J]. 数学季刊, 2006, 21(4): 590-596 |
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| 作者姓名： | 郭秀兰 张玉兰 李功胜 |
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| 作者单位： | Faculty of Science Henan University of Technology，Department of Mathematics，Luoyang Normal College，Department of Mathematics，Shandong University of Engineering，Zhengzhou 450052，China，Luoyang 471022，China，Zibo 255049，China |
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| 基金项目： | Supported the National Natural Science Foundation of China(10471080)，Supported by the Natural Science Foundation of Henan Province(2004110008) |
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| 摘 要： | This paper is devoted to the mixed initial-boundary value problem for the semi- conductor equations.Using Stampacchia recurrence method,we prove that the solutions are globally bounded and positive.
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| 关 键 词： | 整体有界性解 漂移扩散半导体方程 初始边界值问题 数学分析 |
On Global Boundedness of Solutions for the Drift-diffusion Semiconductor Equations |
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| GUO Xiu-lan,ZHANG Yu-lan,LI Gong-sheng. On Global Boundedness of Solutions for the Drift-diffusion Semiconductor Equations[J]. Chinese Quarterly Journal of Mathematics, 2006, 21(4): 590-596 |
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| Authors: | GUO Xiu-lan ZHANG Yu-lan LI Gong-sheng |
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| Affiliation: | [1]Faculty of Science, Henan University of Technology, Zhengzhou 450052 [2]Department of Mathematics, Luoyang Normal College, Luoyang 471022, China [3]Department of Mathematics, Shahdong University of Engineering, Zibo 255049, China |
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| Abstract: | This paper is devoted to the mixed initial-boundary value problem for the semi- conductor equations.Using Stampacchia recurrence method,we prove that the solutions are globally bounded and positive. |
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| Keywords: | drift-diffusion model semiconductor equations global boundedness stampacchia recurrence method |
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