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Effects of Ga-flux on Optical Properties and Morphology of GaN Grown via Molecular Beam Epitaxy |
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| Authors: | YANG Jing-hai GONG Jie FAN Hou-gang YANG Li-li ZHANG Yong-jun Zsebk O CHEN Gang |
| Institution: | 1. The Institute of Condensed State Physics, Jilin Normal University, Siping 136000, P. R. China; 2. College of Materials Science and Engineering, Jilin University, Changchun 130023, P. R. China; 3. Applied Science College, Changchun University, Changchun 130022, P. R. China; 4. Department of Physics, Chalmers University of Technology, Gteborg SE-412 96, Sweden |
| Abstract: | A series of GaN layers was grown on sapphire (0001) substrates under various growth conditions by means of the molecular beam epitaxy(MBE) method, the optical characteristics and surface morphologies of the samples were studied. The results show that the line width of the GaN emission gradually decreases and the peak shifts under the Ga-rich condition by increasing the Ga-flux on keeping all other growth conditions unchanged. It has been also found that the resulted morphology is directly related to the Ga-flux. |
| Keywords: | Molecular beam epitaxy Photoluminescence Morphology |
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