Electroluminescence in SiO2 layers in various structures |
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| Authors: | A. P. Baraban P. P. Konorov L. V. Miloglyadova A. G. Troshikhin |
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| Affiliation: | (1) Fock Institute of Physics, St. Petersburg State University, ul. Ul’yanovskaya 1, Petrodvorets, St. Petersburg, 198504, Russia |
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| Abstract: | Electroluminescence (EL) in an electrolyte-insulator-semiconductor system is used to study oxide layers in Si-SiO2-Si3N4 and Si-SiO2 structures prepared using various techniques. The EL spectra of all the structures contained the 2.7-eV emission band characteristic of the radiative relaxation of excited sililene centers. A comparative study of the conditions conducive to the formation of such luminescence centers in various structures containing SiO2 layers was made, and their nature was refined. |
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