Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications |
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Authors: | C.L. Frewin C. Locke J. Wang P. Spagnol S.E. Saddow |
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Affiliation: | aDepartment of Electrical Engineering, University of South Florida, 4202 E. Fowler Avenue, ENB 118, Tampa, FL 33620, United States;bSRI International, Engineering & Systems Division, 7935 114th Avenue North, Largo, FL 33773, United States |
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Abstract: | The growth of highly oriented 3C–SiC directly on an oxide release layer, composed of a 20-nm-thick poly-Si seed layer and a 550-nm-thick thermally deposited oxide on a (1 1 1)Si substrate, was investigated as an alternative to using silicon-on-insulator (SOI) substrates for freestanding SiC films for MEMS applications. The resulting SiC film was characterized by X-ray diffraction (XRD) with the X-ray rocking curve of the (1 1 1) diffraction peak displaying a FWHM of 0.115° (414″), which was better than that for 3C–SiC films grown directly on (1 1 1)Si during the same deposition process. However, the XRD peak amplitude for the 3C–SiC film on the poly-Si seed layer was much less than for the (1 1 1)Si control substrate, due to slight in-plane misorientations in the film. Surprisingly, the film was solely composed of (1 1 1) 3C–SiC grains and possessed no 3C–SiC grains oriented along the 3 1 1 and 1 1 0 directions which were the original directions of the poly-Si seed layer. With this new process, MEMS structures such as cantilevers and membranes can be easily released leaving behind high-quality 3C–SiC structures. |
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Keywords: | A1. X-ray diffraction A1. Characterization A3. Chemical vapor deposition processes B1. Silicon Carbide B3. MEMS devices |
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