N2O为氧源金属有机化学气相沉积生长ZnO薄膜的光学性能研究

采用常压金属有机化学气相沉积(AP-MOCVD)技术、三步生长法,分别以H2O和N2O为氧源,DEZn为Zn源,N2作载气,在c-Al2O3衬底上生长出了晶体质量较好的ZnO薄膜。用X射线双晶衍射(DCXRD)和光致发光谱对ZnO薄膜的结晶性能和光学性质进行表征。结果显示,ZnO倾斜对称面(10-12)的ω扫描半峰全宽为350″,表明ZnO薄膜结晶性能良好;低温10 K光致发光谱结果表明,N2O为氧源生长的ZnO膜和H2O为氧源生长的ZnO膜的发光特性明显不同,没有观察到与氢有关的中性施主束缚激子对应的3.331 eV双电子卫星峰(TES)。这一结果表明,用N2O为氧源生长的ZnO薄膜中不易引进氢杂质。

Optical Properties of ZnO Thin Film Grown by Atmospheric Pressure-Metal Organic Chemical Vapor Deposition Using N2O as Oxygen Precursor

High-quality ZnO films were grown on c-Al2O3 substrate by atmospheric pressure-metal organic chemical vapor deposition technique, using a method of three-step growth. DEZn and H2O were used as the Zn and O precursors in both the low and high temperature N2 buffers and N2O was used as O precursor in the main ZnO layer. The full width at half maximum (FWHM) of the inclined symmetrical plane (10-12) ω-scan of the ZnO film by double crystal X-ray diffraction method was 350″, indicating the high crystal quality of the ZnO film. Compared with the 10 K low temperature photoluminescence spectra of the H2O-grown ZnO sample, the two-electron satellite peak caused by the hydrogen related neutral donor trapping excition disappeared in that of the N2O-growth ZnO sample. It indicated that hydrogen was not easily introduced into the N2O-growth ZnO film.