The effect of uniaxial static pressure on the behavior of an aluminum acceptor impurity in silicon |
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| Authors: | T N Mamedov D Andreica D G Andrianov D Herlach V N Gorelkin K I Gritsai V A Zhukov A V Stoikov U Zimmermann |
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| Institution: | (1) Joint Institute for Nuclear Research, Dubna, Moscow region, 141980, Russia;(2) University Babes-Bolyai, 3400 Cluj-Napoca, Romania;(3) State Research and Design Institute of Rare Metals “Giredmet,”, Moscow, 109017, Russia;(4) Paul Scherrer Institute, CH-5232 Villigen, Switzerland;(5) Moscow Institute of Physics and Technology, Dolgoprudnyi, Moscow region, 141700, Russia |
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| Abstract: | The effect of uniaxial compression on the behavior of shallow aluminum acceptor centers in silicon has been studied. The μAl impurity atoms were created by implanting negative muons into silicon single crystals doped with phosphorus to 1.6×1013 cm?3 (sample 1) and 1.9×1013 cm?3 (sample 2). The muon polarization was studied in the temperature range 10–300 K. Measurements were performed in a magnetic field of 2.5 kG oriented perpendicularly to the muon spin. The samples were oriented so that the selected crystal axis (111] and 100] in samples 1 and 2, respectively), the magnetic field, and the initial muon-spin polarization were mutually perpendicular. External pressure applied to the sample along the indicated crystal axis changed both the absolute value of the acceptor magnetic-moment relaxation rate and the character of its temperature dependence. |
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