Analysis of the Nonselective Spectra of Photostimulated Electron Emission from the Surface of Irradiated Dielectrics |
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Authors: | Email author" target="_blank">A?F?ZatsepinEmail author D?Yu?Biryukov V?S?Kortov |
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Institution: | (1) Ural State Technical University — UPI, 19 Mir Str., Ekaterinburg, 620002, Russia |
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Abstract: | The methodological aspects of PSEE spectroscopy of the surface of irradiated dielectrics have been considered. A generalized
method for processing the nonselective photostimulated electron emission (PSEE) spectra taking into account the effects of
radiation electrification and structural disordering is proposed and has been substantiated. The procedure of separation of
the emission contribution of discrete radiation centers providing, in the stationary approach, estimation of a number of parameters
and the concentration of emission-active defects of the surface layer of the material has been described. The potentialities
of the method have been demonstrated with the example of Be2SiO4 phenacite crystals and crystalline and glassy SiO2. Diamagnetic oxygen-deficient centers, body and surface E'-centers, as well as hole O
1
0
-centers on nonbridging oxygen atoms have been registered.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 3, pp. 381–385, May–June, 2005. |
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Keywords: | photoelectron emission surface layer dielectric radiation center spectral parameters and concentration |
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