CBE growth of InGaAsP/InP multiple quantum wells for optical modulator applications

The incorporation of group III and group V in the chemical beam epitaxy of InGaAsP/InP multiple quantum well structures has been studied in the temperature range of 470 to 550°C. Both Ga/In and P/As composition ratios are found to be strongly dependent on the growth temperature. The enhancement of phosphorus incorporation at high temperature is identified for the first time, which has a profound impact on the incorporation of group III, in particular the adsorption/pyrolysis of triethygallium. With accurate growth temperature control, high quality InGaAsP/InP superlattices with a large number of periods can be grown under continuous growth mode. Clear quantum confined Stark effect near 1.5 μm has been observed in a p-i-n test modulator structure.