| 一种相变存储器读出电路及其快速读出方法 |
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| 引用本文： | 李喜,宋志棠,陈后鹏,富聪,丁晟. 一种相变存储器读出电路及其快速读出方法[J]. 微电子学, 2012, 42(1): 21-24 |
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| 作者姓名： | 李喜 宋志棠 陈后鹏 富聪 丁晟 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室纳米技术研究室,上海,200050 |
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| 基金项目： | 国家集成电路重大专项，国家重点基础研究发展计划基金，国家自然科学基金，上海市科委资助项目 |
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| 摘 要： | 针对大规模相变存储器所具有的寄生电容大、可能出现读破坏现象等特性,提出了一种读电压模式的相变存储器读出电路及其快速读出方法。基于SMIC 40nm CMOS工艺的仿真结果表明,在2.5V电源电压下,该方法可以在90ns的读出周期内正确读出位线寄生电容为30pF的存储单元数据,同时,该读出周期随位线寄生电容的减小而减小。另外,该方法可以和传统的Burst等快速读出方式并存,非常适用于带数据预读机制的高端存储器技术。
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| 关 键 词： | 相变存储器 读出电路 灵敏放大器 |
A Readout Circuit for Phase Change Memory and Its Rapid Read Method |
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| LI Xi , SONG Zhitang , CHEN Houpeng , FU Cong , DING Sheng. A Readout Circuit for Phase Change Memory and Its Rapid Read Method[J]. Microelectronics, 2012, 42(1): 21-24 |
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| Authors: | LI Xi SONG Zhitang CHEN Houpeng FU Cong DING Sheng |
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| Affiliation: | (State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai Institute of Micro-system and Information Technology,The Chinese Academy of Sciences,Shanghai 200050,P.R.China) |
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| Abstract: | With increasing scale of phase change memory,its readout progress becomes slow and unreliable due to serious parasitic effect and read damage effect.A readout circuit based on voltage sensing mode and its rapid read method were presented.Simulation results based on SMIC 40 nm CMOS process showed that,at 2.5 V supply power,this method could correctly read out cell state with 30 pF parasitic capacitance in 90 ns,and the read cycle could be reduced by decreasing parasitic capacitance.In addition,this method can coexist with the traditional burst way,and it is quite suitable for advanced memory technologies with pre-fetching mechanism. |
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| Keywords: | Phase change memory(PCM) Readout circuit Sense amplifier |
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