| SiC JFET功率特性的仿真与优化 |
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| 引用本文： | 张林,杨霏,肖剑,邱彦章.SiC JFET功率特性的仿真与优化[J].微电子学,2012,42(3):402-405. |
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| 作者姓名： | 张林 杨霏 肖剑 邱彦章 |
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| 作者单位： | 1. 长安大学电子与控制工程学院道路交通检测与装备工程技术研究中心,西安,710064
2. 中国电子科技集团公司第十三研究所专用集成电路国家重点实验室,石家庄,050051 |
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| 基金项目： | 西安市科技计划项目，中央高校基本科研业务费专项资金资助项目 |
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| 摘 要： | 建立了常关型SiC结型场效应晶体管(JFET)功率特性的数值模型,研究了不同的结构和材料参数对器件功率特性的影响。仿真结果显示,沟道层、漂移层等各层的厚度及掺杂浓度对器件的开态电阻和击穿电压都有明显的影响;采用电流增强层可以明显提高器件的功率特性。研究结果表明,对SiC JFET的结构参数进行优化,可以有效提高器件的优值(FOM)。
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| 关 键 词： | 碳化硅 结型场效应晶体管 数值模型 |
Modeling and Optimization of Power Characteristics for SiC JFET |
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| ZHANG Lin
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YANG Fei
,
XIAO Jian
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QIU Yanzhang.Modeling and Optimization of Power Characteristics for SiC JFET[J].Microelectronics,2012,42(3):402-405. |
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| Authors: | ZHANG Lin YANG Fei XIAO Jian QIU Yanzhang |
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| Institution: | 1(1.School of Electronic and Control Engineering,Road Traffic Detection and Equipment Engineering Research Center,Chang’an Univ., Xi’an 710064,P.R.China;2.National Key Laboratory of ASIC,The 13th Research Institute,CETC,Shijiazhuang 050051,P.R.China) |
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| Abstract: | Two dimensional numerical model of power characteristics for normally-off SiC JFET was built to study effects of different structural and material parameters on power characteristics of the device.Simulation results showed that thickness and doping concentration of the channel layer and drift layer had a significant effect on the on-state resistance and breakdown voltage of the device,and power characteristics of the device could be improved remarkably by using current enhancement layer.It has been demonstrated that FOM values of the device could be effectively improved by choosing proper structural parameters of the SiC JFET. |
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| Keywords: | Silicon carbon JFET Numerical model |
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