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一种高效的星载高速固态存储器坏块管理算法
引用本文:任海,刘伟亮,唐振刚,张风源,潘乐乐.一种高效的星载高速固态存储器坏块管理算法[J].应用声学,2018,26(1).
作者姓名:任海  刘伟亮  唐振刚  张风源  潘乐乐
作者单位:上海航天电子技术研究所,上海航天电子技术研究所,,上海航天电子技术研究所,上海航天电子技术研究所
摘    要:随着卫星技术的发展和功能的多样化,星载固态存储器需要存储的数据量越来越大,存储速率越来越高,在轨寿命越来越长。基于NAND Flash的星载固态存储器的并行存储方案得到广泛应用。但是由于NAND Flash存在初始坏块,且Flash芯片中坏块分布离散性较大。当固态存储器存储速率较高,并行存储的Flash芯片数增多,坏块经叠加映射后,使固态存储器有效容量损失较大。针对高速固态存储器的坏块问题,提出了一种高效的坏块管理算法,通过对坏块进行地址映射和替换,使固态存储器初始有效容量与装机容量的比值在高速并行存储的情况下仍能保持在97%左右,提高了Flash芯片存储容量的利用率,延长了大容量星载高速固态存储器的使用寿命。

关 键 词:坏块管理  NAND  Flash  高速固态存储器
收稿时间:2017/10/19 0:00:00
修稿时间:2017/11/8 0:00:00

An efficient bad block management algorithm of space borne high-speed solid state memory
LIU Weiliang,TANG Zhengang,ZHANG Fengyuan and PAN Lele.An efficient bad block management algorithm of space borne high-speed solid state memory[J].Applied Acoustics,2018,26(1).
Authors:LIU Weiliang  TANG Zhengang  ZHANG Fengyuan and PAN Lele
Institution:Shanghai Aerospace Electronic Technology Institute,Shanghai Aerospace Electronic Technology Institute,Shanghai Satellite Engineering Research Institute,Shanghai Aerospace Electronic Technology Institute,Shanghai Aerospace Electronic Technology Institute
Abstract:With the development and diversification of satellite technology ,space borne solid-state memory need more storage data volume ,higher storage rate and longer on-orbit life than before. The parallel storage scheme of space borne solid-state memory, which is based on NAND Flash ,has been widely used. However, when solid state memory storage rate is higher ,the increase number of parallel storage Flash chips and the superimposed mapping of bad blocks will make a large loss of solid storage capacity, which is due to the initial bad block of NAND Flash and the larger distribution of Flash chip"s broken block. given the bad block problem of high-speed solid storage ,this article presents an efficient method of bad block management .After address mapping and substitution for bad blocks, the ratio of initial capacity and installed capacity of solid-state memory can be maintained at about 97% in the case of high-speed parallel storage, Flash chip storage capacity utilization can be improved, and lifetime of high-capacity space borne high-speed solid-state memory will be extended.
Keywords:Bad  block management  NAND  Flash  High  speed solid  state memory
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