Confined longitudinal and transverse phonons in GaAs/AlAs superlattices |
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| Affiliation: | 1. Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505, Japan;2. Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, 153-8904, Japan;3. I2M, UMR 5295, CNRS-UB-ENSAM, 33 405, Talence, France;4. LIMMS, CNRS-IIS IRL 2820, The University of Tokyo, Tokyo, 153-8505, Japan;1. Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, 576104, India;2. School of Materials Science and Engineering, UNSW, Sydney, NSW, 2052, Australia;3. ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW, Sydney, NSW, 2052, Australia;1. Leibniz Institute for Solid State and Materials Research Dresden, SAWLab Saxony, Helmholtzstr. 20, 01069 Dresden, Germany;2. InnoXacs GmbH, Am Muehlfeld 34, 01744 Dippoldiswalde, Germany |
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| Abstract: | The phonon spectrum of GaAs/AlAs superlattices along the (001) growth direction is calculated using a new approach based on a realistic unified treatment of the interactions in both bulk constituents, which naturally lends itself to dealing with superlattice geometries. Results for a (GaAs)3(AlAs)3 superlattice are shown with emphasis on different aspects of confinement. |
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