Cyclotron resonance and screening effects in GaAs-GaAlAs heterojunctions |
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| Institution: | 1. Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.;2. Philips Research Laboratories, Redhill, Surrey, U.K.;1. Department of Physics, Indian Institute of Technology Guwahati, Assam 781039, India;2. Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502285, Telangana, India;3. School of Physics, Korea Institute for Advanced Study, Seoul 02455, Republic of Korea;1. School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China;2. Institute of Microelectronics, Peking University, Beijing 100871, China |
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| Abstract: | Cyclotron resonance absorption has been studied in several high quality GaAs-GaAlAs heterojunctions. The dependence of the effective mass upon frequency, electron concentration and temperature has been measured and gives a nonparabolicity that is some 20% smaller than that measured in bulk GaAs. This is contrary to simple theory which predicts an enhanced polaron contribution in two-dimensional systems, and we attribute this difference to strong screening of the electron-phonon interaction. The presence of a small magnetic field component parallel to the interface introduces a coupling at energies corresponding to the electric subband separations. These couplings have been studied as a function of electron concentration and the results interpreted in terms of changes in the depletion charge in the GaAs layer. |
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