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Parallel and perpendicular transport in Si/CoSi2 and Si/CoSi2/Si heterostructures |
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| Institution: | 1. Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan;2. School of Space Science and Physics, Shandong University at Weihai, 180 Wenhuaxi Road, Weihai 264209, PR China;3. Department of Materials Engineering and Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, Taipei 243, Taiwan;4. College of Engineering, Chang Gung University, Taoyuan 333, Taiwan;1. Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577, Japan;2. Collaborative Research Project of Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama 226-8503, Japan;3. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503, Japan |
| Abstract: | It has recently become possible to grow epitaxial Si/CoSi2/Si semiconductor-metal-semiconductor heterostructures of almost perfect crystalline quality. Electronic transport in the plane of the metal film (parallel transport) is investigated by the extensive studies of resistivity and superconducting properties of these films. The sharp influence of film thickness on both phenomena is presented and its physical origin is briefly discussed. The transfer of hot electrons emitted by the top Siepi/PrmCoSi2 diode to the Sibulk/CoSi2 through the metal film (perpendicular transport) is studied. Experimental data strongly favor the hypothesis of ballistic transport with a ballistic mean free path close to the one deduced from resistivity measurements. |
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