Field-induced lifetime enhancement and ionization of excitons in GaAs/AlGaAs quantum wells |
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| Affiliation: | 1. Escuela de Ingeniería de Antioquia-EIA, Envigado, Colombia;2. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia-UdeA, Calle 70 No. 52-21, Medellín, Colombia;3. Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey;4. Department of Physics, Donbass State Engineering Academy, Shcadinova 72, 84313 Kramatorsk, Ukraine;1. Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico;2. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia;3. Universidad EIA, CP 055428, Envigado, Colombia;4. Faculty of Technology, Department of Optical Engineering, Cumhuriyet University, 58140, Sivas, Turkey;5. Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, CP 98060, Zacatecas, Zac., Mexico;6. Faculty of Science, Department of Physics, Cumhuriyet University, 58140, Sivas, Turkey;1. Department of Chemistry, University College of Science and Technology, University of Calcutta, Kolkata, India;2. Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Kolkata, India;1. Faculty of Technology, Department of Optical Engineering, Sivas Cumhuriyet University, 58140 Sivas, Turkey;2. Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, CP 98060, Zacatecas, Zac., Mexico;3. Universidad EIA, CP 055428, Envigado, Colombia;4. Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico;1. Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo La Bufa S/N, C.P. 98060, Zacatecas, Zac., Mexico;2. Unidad Académica de Ingeniería, Universidad Autónoma de Zacatecas, Ramón López Velarde 801, C.P. 98000, Zacatecas, Zac., Mexico;3. Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico |
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| Abstract: | Picosecond and nanosecond luminescence studies of GaAs/AlGaAs quantum wells exposed to electric fields perpendicular to the layers are reported. The drastic red-shift of the photoluminescence with the electric field strength is accompanied by a strong increase of the electron-hole recombination lifetime. These features are most dominant for the wider wells due to the stronger polarization of the confined electron-hole pairs. Our observations are consistent with the model of the Quantum-Confined Stark Effect. In contrast, for high fields in the regime of ∼100 kV/cm field ionization limits the confinement of electrons and holes and leads to a strong decrease of the photoluminescence yield and lifetime with increasing field strength. |
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