Electron transport in the conduction channel of the HEMT |
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| Affiliation: | 1. Korea Advanced Nanofab Center (KANC), Republic of Korea;2. Department of Material Science and Engineering, Yonsei University, Republic of Korea;3. School of Electronics Engineering, Kyungpook National University (KNU), Republic of Korea;4. Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, Republic of Korea;1. School of Electronic and Electrical Engineering, Kyungpook National University, South Korea;2. School of Electrical Engineering, University of Ulsan, South Korea;3. NTT Device Technology Laboratories, NTT Corporation, Japan |
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| Abstract: | The electron transport in the conduction channel of the HEMT is investigated using an Ensemble Monte Carlo method, which includes the first two subbands in the quantum well. The interaction between the channel and the rest of the device is accounted for, including intravalley and intervalley transitions between confined and 3-D states. The model allows an evaluation of the real-space transfer effects. |
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