In-process ZnO thin films alloying during pulsed laser deposition

Alloyed ZnO:Al thin films were prepared by a pulsed laser deposition by the altering of two pure targets (ZnO and Al) during the deposition process. Two deposition temperatures (?197 °C and 400 °C) were applied and differences of diffusion dynamics were compared. As-grown layered films were annealed and aluminium distribution was homogenized. The results revealed that the amorphous structure (samples grown at ?197 °C) of ZnO provide more positive conditions for efficient Al diffusion in comparison with crystalline structure (samples grown at 400 °C). A detailed investigation by SIMS depth profiling confirmed a homogeneous chemical composition of annealed and recrystallized films which exhibited a porous nature and wurtzite crystalline structure.