Spin dependent electronic transport properties of zigzag black phosphorene nanojunctions induced by H,Li, O,Co asymmetric edge saturations |
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Affiliation: | 1. School of Physics and Electronics, Central South University, Changsha 410083, China;2. Institute of Low-dimensional Quantum Materials and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China |
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Abstract: | Two-dimensional (2D) material of few-layer black phosphorus (BP) has recently attracted extensive interest owing to its tunable band gap and high carrier mobility. We investigate the electronic transport properties of zigzag black phosphorene nanoribbons (ZBPNRs) with asymmetric H, Li, O and Co edge saturations by employing the density functional theory in combination with the non-equilibrium Green's function. The computational results forecast that different types of saturated atoms at both edge of ribbons mainly contribute to the electronic transport properties of molecular junctions. The metal edge saturation of Co atom is used to the one edge of ZBPNR which can induce an identical electronic transport property. Interestingly, the negative differential resistance (NDR) phenomena can be observed in our proposed ZBPNR junctions with an analysis of internal physical mechanism. Our theoretical results could support the possibility of potential applications to design 2D electronic devices based on the material of BP in future. |
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Keywords: | Zigzag black phosphorene nanoribbon Edge saturation Density functional theory Electronic transport properties Negative differential resistance |
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