Energy storage properties of antiferroelectric 0.92NaNbO3-0.08SrZrO3 film on (001)SrTiO3 substrate |
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| Affiliation: | 1. Department of Materials Chemistry, Ryukoku University, Seta, Otsu 520-2194, Japan;2. Graduate Faculty of Interdisciplinary Research, University of Yamanashi, Kofu 400-8510, Japan;3. Graduate School of Science and Technology, Nara Institute of Science and Technology, Ikoma, Nara 630-0192, Japan;4. Technology Innovation Division, Panasonic Corporation, Seika, Kyoto 619-0237, Japan |
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| Abstract: | The present study demonstrates the fabrication of an antiferroelectric 0.92NaNbO3-0.08SrZrO3 film deposited on a SrRuO3 coated (001)SrTiO3 single crystal substrate by pulsed laser deposition. In the 0.92NaNbO3-0.08SrZrO3 film, the domain with its c-axis aligned with the out-of-plane direction contributed to the stabilization of an antiferroelectric phase under the high electric field. The film had an energy storage density of 2.9 J cm−3 and storage efficiency of 67% at room temperature, which kept at 2.5 J cm−3 and 50% at high temperature of 150 °C. |
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| Keywords: | Antiferroelectric materials Energy storage |
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