Induction and control of dielectric relaxation properties in Fe-doped nonstoichiometric SrTiO3 ceramics |
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Institution: | 1. Department of Mathematics and Science, Luoyang Institute of Science and Technology, 471023, Luoyang, China;2. School of Physics and Engineering, Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, Henan University of Science and Technology, 471000, Luoyang, China;3. National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China |
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Abstract: | The dielectric properties of Fe-doped Ti-rich SrTiO3 ceramics at both A and B sites were investigated. For A site doping, we found one structural phase transition associated with the substitution of smaller Fe ions, and two sets of dielectric relaxations ascribed to oxygen vacancies and hopping conduction between Fe2+ and Fe3+, respectively. Cole-Cole relation shows that both thermally activated dielectric relaxation behaviors mainly originate from the grain boundary. However, for B site doping, they are not observed in the measured temperature range since both the short-range diffusion of oxygen vacancies and electron conduction become the long-range migration, which indicates that the additional conductive channels are opened when Fe ion doping changes from A to B site. The results provide an experimental basis for adjusting dielectric properties in paraelectric materials. |
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Keywords: | Electrical properties Oxygen vacancies Dielectric relaxations |
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