Phase transition and random-field induced domain wall response of SrTi O 3 |
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| Authors: | L. Zhang W. Kleemann J. Dec R. Wang M. Itoh |
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| Affiliation: | Laboratorium für Angewandte Physik, Gerhard Mercator Universit?t Duisburg, 47048 Duisburg, Germany, DE
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan, JP
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| Abstract: | The dielectric permittivity ε′ - i of SrTi 18O 3 (STO18) is studied under a dc electric field E as a function of the temperature, T. In ε′ vs. T, a double-peak is found when 0 < E < 30 KV/m. While the peak at high-T is attributed to the smeared ferroelectric phase transition, the low-T one is induced by domain wall motion. The transverse Ising model including an external homogeneous and quenched random-fields is successfully used to describe both the smeared phase transition and the domain wall response in the low-T domain state. The calculations are in good agreement with the experimental results. Received 4 January 2002 / Received in final form 25 March 2002 Published online 19 July 2002 |
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| Keywords: | PACS. 77.22.Ch Permittivity (dielectric function) – 77.80.Bh Phase transitions and Curie point – 77.80.Dj Domain structure hysteresis – 77.84.Dy Niobates, titanates, tantalates, PZT ceramics, etc. |
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