Effects of crystallization temperature on the growth and doping of autoep it axial gallium arsenide films |
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| Authors: | L G Lavrent'eva Yu G Kataev Yu M Rumyantsev A D Shumkov |
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| Institution: | (1) Kuzetsov Siberian Technical Physics Institute, Tomsk University, USSR;(2) Institute of Inorganic Chemistry, Siberian Division, Academy of Sciences of the USSR, USSR |
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| Abstract: | Dope concentration measurements have been made on epitaxial gallium arsenide films of (1  11.075) A orientation; there is an optimal temperature range, which corresponds to the minimum impurity concentration and maximum electron mobility. The electrophysical properties and morphology are clearly correlated.Translated from Izvestiya VUZ. Fizika, No. 6, pp. 71–75, June, 1973. |
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