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Fabrication of blue LEDs on big chips
引用本文:殷宗友,曹殿生,殷景志,张源涛,李正庭,杜国同,杨树人. Fabrication of blue LEDs on big chips[J]. 中国光学快报(英文版), 2003, 1(4)
作者姓名:殷宗友  曹殿生  殷景志  张源涛  李正庭  杜国同  杨树人
作者单位:Changchun University of Technology,School of Material Science and Engineering,Changchun 130012 Jilin University,College of Electronic Science and Engineering,Changchun 130023,CAO GROUP,INC. 8683 South 700 West Sandy,UT 84070,USA,Jilin University,College of Electronic Science and Engineering,Changchun 130023,Jilin University College of Electronic Science and Engineering,Changchun 130023,Jilin University College of Electronic Science and Engineering,Changchun 130023,Jilin University College of Electronic Science and Engineering,Changchun 130023,Jilin University College of Electronic Science and Engineering,Changchun 130023
摘    要:In this paper, the GaN based epitaxial wafer is fabricated on big 1 mmx1 mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125? 210, 000 cd/m2 and 1.5 1m, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.


Fabrication of blue LEDs on big chips
Abstract:In this paper, the GaN based epitaxial wafer is fabricated on big 1 mm×1 mm chips, and packaged witha special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, theaxial brightness and the output integral power of the 465 nm LED can reach 125°, 210,000 cd/m2 and 1.5lm, respectively. The LED with such good performances has promising application potential in the fieldsof display, traffic and the development of solid-state white light source.
Keywords:
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