Electronic state of nanodiamond/graphite interfaces |
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| Authors: | AV Okotrub LG Bulusheva VL Kuznetsov AV Gusel’nikov AL Chuvilin |
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| Institution: | (1) Nikolaev Institute of Inorganic Chemistry SB RAS, pr. Ak. Lavrentieva 3, Novosibirsk, 630090, Russia;(2) Boreskov Institute of Catalysis SB RAS, pr. Ak. Lavrentieva 5, Novosibirsk, 630090, Russia |
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| Abstract: | The electronic state of nanodiamond/graphite interfaces in samples prepared by annealing of nanodiamonds (ND) at 1150–1600 K has been probed using X-ray fluorescence spectroscopy and field-emission measurements. Comparison between C]K spectra of ND before and after annealing revealed an enhancement of density of high-energy occupied states in the products. A quantum-chemical calculation using a carbon model showed that the observed states could originate from the electrons of dangling bonds produced by peeling of a graphitic shell from the (111) surface of a diamond particle. The developed graphitic layers screen the weakly bonding electrons, which results in a lowering of the efficiency of field-electron emission from the samples with an increase of annealing temperature. PACS 61.46.+w; 78.70.En; 79.70.+q |
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