| 新型衬底晶体LiGaO2的生长和结晶性质研究 |
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| 引用本文： | 黄为民,徐军.新型衬底晶体LiGaO2的生长和结晶性质研究[J].发光学报,1997,18(1):84-86. |
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| 作者姓名： | 黄为民 徐军 |
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| 作者单位： | 中国科学院上海光学精密机械研究所 |
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| 摘 要： | 氮化物长期以来被看作是在蓝光及紫外波段光电子应用中最有希望的材料1].但在改进材料质量方面最大的困难是:缺乏一种能和GaN在晶格及热性能方面十分匹配的理想衬底材料2].Al2O3被普遍认为可以作为GaN的衬底材料.这主要是由于它具有的结构、热性能好,和生长加工容易等特点.
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| 关 键 词： | 衬底 LiGaO2 |
| 收稿时间： | 1996-04-01 |
GROWTH AND CRYSTALLIZATION HABIT OF A NOVEL SUBSTRATE CRYSTAL LiGaO 2 |
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| Huang Weimin,Xu Jun,Wu Guangzhao,Deng Peizen,Gan Fuxi.GROWTH AND CRYSTALLIZATION HABIT OF A NOVEL SUBSTRATE CRYSTAL LiGaO 2[J].Chinese Journal of Luminescence,1997,18(1):84-86. |
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| Authors: | Huang Weimin Xu Jun Wu Guangzhao Deng Peizen Gan Fuxi |
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| Institution: | Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, Shanghai 201800 |
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| Abstract: | LiGaO 2 is a new preferred substrate for the eptaxtial growth of GaN visible LEDS and laser diodes. The large size and high quality single crystals of LiGaO 2 up to 15 mm in diameter and 50 mm in length were grown by the Czochralski method. The crystal morphology of all developing facets were investigated. |
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| Keywords: | substrate LiGaO 2 |
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