| Spatial distribution of SiCln （n=O-2） in SICl4 plasma measured by mass spectroscopy |
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| 引用本文： | 王照奎,林揆训,娄艳辉,林璇英,祝祖送.Spatial distribution of SiCln （n=O-2） in SICl4 plasma measured by mass spectroscopy[J].中国物理 B,2006,15(10):2374-2377. |
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| 作者姓名： | 王照奎 林揆训 娄艳辉 林璇英 祝祖送 |
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| 作者单位： | Department of Physics, Henan Normal University, Xinxiang 453007, China;Department of Physics, Shantou University, Shantou 515063, China;Department of Physics, Henan Normal University, Xinxiang 453007, China;Department of Physics, Shantou University, Shantou 515063, China;Department of Physics, Shantou University, Shantou 515063, China |
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| 基金项目： | Project supported by the
State Key Development Program for Basic Research of China (Grant No
G2000028208). |
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| 摘 要： | For a better understanding of the deposition mechanism of thin films in SiCl4 source gas, we have measured the spatial distributions of SiCln （n=0-2） radicals in SICl4 radio frequency glow discharge plasma utilizing a mass spectrometer equipped with a movable gas sampling apparatus. The experimental results demonstrate that the relative densities of SiCln （n=0-2） radicals have peak values at the position of 10 mm above the powered electrode along the axial direction; the relative densities of the Si and SiCIn （n=1, 2） radicals have peak values at the positions of 27mm and 7 mm away from the axis along the radial direction, respectively. Generally speaking, in the whole SICl4 plasma bulk region, the relative density of Si is one order of magnitude higher than that of SICl, and the relative density of SiCl is several times higher than that of SICl2. This reveals that Si and SiCl may be the primary growth precursors in forming thin films.
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| 关 键 词： | 空间分布 质量光谱测定诊断 沉积机制 射电频率 |
| 收稿时间： | 2005-12-12 |
| 修稿时间： | 4/3/2006 12:00:00 AM |
Spatial distribution of SiCln (n=0--2) in SiCl4 plasma measured by mass spectroscopy |
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| Wang Zhao-Kui,Lin Kui-Xun,Lou Yan-Hui,Lin Xuan-Ying and Zhu Zu-Song.Spatial distribution of SiCln (n=0--2) in SiCl4 plasma measured by mass spectroscopy[J].Chinese Physics B,2006,15(10):2374-2377. |
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| Authors: | Wang Zhao-Kui Lin Kui-Xun Lou Yan-Hui Lin Xuan-Ying and Zhu Zu-Song |
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| Institution: | a. Department of Physics, Henan Normal University, Xinxiang 453007, China; b. Department of Physics, Shantou University, Shantou 515063, China |
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| Abstract: | For a better understanding of the deposition mechanism of thin films in
SiCl4 source gas, we have measured the spatial distributions of
SiCln (n=0--2) radicals in SiCl4 radio frequency glow discharge
plasma utilizing a mass spectrometer equipped with a movable
gas sampling apparatus. The experimental results demonstrate that the
relative densities of SiCln (n=0--2) radicals have peak values at the
position of 10mm above the powered electrode along the axial direction;
the relative densities of the Si and SiCln (n=1, 2) radicals have peak
values at the positions of 27mm and 7mm away from the axis along the radial
direction, respectively. Generally speaking, in the whole SiCl4
plasma bulk region, the relative density of Si is one order of magnitude
higher than that of SiCl, and the relative density of SiCl is several times
higher than that of SiCl2/sub>. This reveals that Si and SiCl may be the
primary growth precursors in forming thin films. |
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| Keywords: | SiCln (n=0--2) neutral radicals spatial distribution mass spectrometric diagnosis |
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