1,2,3-Triazolylfullerene-based n-type semiconductor materials for organic field-effect transistors |
| |
| Affiliation: | 1. Institute of Petrochemistry and Catalysis, Ufa Federal Research Center of the Russian Academy of Sciences, 450075 Ufa, Russian Federation;2. Ufa University of Science and Technology, 450076 Ufa, Russian Federation;1. A. N. Nesmeyanov Institute of Organoelement Compounds, Russian Academy of Sciences, 119334 Moscow, Russian Federation;2. D. I. Mendeleev University of Chemical Technology of Russia, 125047 Moscow, Russian Federation;3. M. M. Shemyakin–Yu. A. Ovchinnikov Institute of Bioorganic Chemistry, Russian Academy of Sciences, 117997 Moscow, Russian Federation;4. Department of Chemistry, M. V. Lomonosov Moscow State University, 119991 Moscow, Russian Federation;1. Department of Chemistry and Technology, Tver State University, 170100 Tver, Russian Federation;2. All-Russian Scientific Research Institute for Physical-Engineering and Radiotechnical Metrology, 141570 Mendeleevo, Moscow Region, Russian Federation;3. V. N. Orekhovich Institute of Biomedical Chemistry, 119121 Moscow, Russian Federation;1. A. V. Topchiev Institute of Petrochemical Synthesis, Russian Academy of Sciences, 119991 Moscow, Russian Federation;2. National Research University Higher School of Economics (HSE University), 101000 Moscow, Russian Federation;3. N. D. Zelinsky Institute of Organic Chemistry, Russian Academy of Sciences, 119991 Moscow, Russian Federation;4. G. V. Plekhanov Russian University of Economics, 117997 Moscow, Russian Federation;5. Department of Chemistry, M. V. Lomonosov Moscow State University, 119991 Moscow, Russian Federation;1. A. G. Merzhanov Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russian Federation;2. N. N. Semenov Federal Research Center for Chemical Physics, Russian Academy of Sciences, 119991 Moscow, Russian Federation |
| |
| Abstract: | The paper describes new organic field-effect transistors with 1-(4-aryl-1,2,3-triazol-1-yl)-2-butylfullerene as a semiconductor layer. The prototype transistor having 2-naphthyl moieties have higher electron mobilities (0.090 ± 10% cm2 V–1 s–1) than that with with biphenyl-4-yl moieties (0.033 ± 10% cm2 V–1 s–1). The thin film surfaces of triazolylfullerenes with 3-thienyl and 2-naphthyl groups were more uniform and had a lower roughness, which is confirmed by atomic force microscopy studies. |
| |
| Keywords: | organic field-effect transistors triazolylfullerenes 1,2,3-triazoles fullerenes mobility of charge carriers surface roughness |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
