Conductance studies in a double-bend quantum structure |
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| Authors: | M. Hannan R. W. Giannetta T. Grundbacher I. AdesidaJ. Eom V. Chandrasekhar |
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| Affiliation: | aMaterials Research Laboratory, Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering;bDepartment of Physics, University of Illinois, Urbana-Champaign, IL 61801, U.S.A.;cDepartment of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, U.S.A. |
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| Abstract: | Transport phenomena in a double-bend quantum structure fabricated in the two-dimensional electron gas of a modulation doped GaAs/AlGaAs structure, are studied experimentally. The structure consists of an electrostatically defined quantum dot with two one-dimensional wires connected on opposite corners of the dot. The current–voltage characteristics of such devices exhibit quantized conductance breakdown (non-linear behavior), conductance variation with confinement, and non-linear and asymmetric behavior at high bias condition. Low temperature conductance of this structure shows evidence of resonant tunneling, while the peaks of the conductance vary with temperature. |
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| Keywords: | GaAs/AIxGa1− xAs double-bend conductance |
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