| 双栅调控的硅量子线中的库仑振荡效应 |
| |
| 引用本文： | 张贤高,方忠慧,陈坤基,钱昕晔,刘广元,徐骏,黄信凡,何飞.双栅调控的硅量子线中的库仑振荡效应[J].物理学报,2011,60(2):27304-027304. |
| |
| 作者姓名： | 张贤高 方忠慧 陈坤基 钱昕晔 刘广元 徐骏 黄信凡 何飞 |
| |
| 作者单位： | (1)南京大学物理系,固体微结构国家实验室,南京 210093; (2)无锡华润华晶微电子有限公司,无锡 214061 |
| |
| 基金项目： | 国家重点基础研究发展计划(批准号:2006CB932202)和国家自然科学基金(批准号:60571008,60721063)资助的课题. |
| |
| 摘 要： | 基于单电子隧穿和库仑阻塞效应,研究了硅量子线中的单电子输运特性.利用绝缘体上硅薄膜材料作为衬底构建侧栅结构的硅量子线单电子晶体管,通过背栅和侧栅对量子线的电子输运特性进行调制.实验发现,在硅量子线中分别观察到背栅和侧栅调制的单电子效应和库仑振荡现象.从微分电导的二维灰度轮廓图,清楚地观察到了库仑阻塞区,说明由于栅压导致在硅量子线中形成了库仑岛.
关键词：
库仑振荡
单电子效应
硅量子线
|
| 关 键 词： | 库仑振荡 单电子效应 硅量子线 |
| 收稿时间： | 2010-04-28 |
Coulomb oscillations effect in dual gate controlled silicon nanowire |
| |
| Zhang Xian-Gao,Fang Zhong-Hui,Chen Kun-Ji,Qian Xin-Ye,Liu Guang-Yuan,Xu Jun,Huang Xin-Fan,He Fei.Coulomb oscillations effect in dual gate controlled silicon nanowire[J].Acta Physica Sinica,2011,60(2):27304-027304. |
| |
| Authors: | Zhang Xian-Gao Fang Zhong-Hui Chen Kun-Ji Qian Xin-Ye Liu Guang-Yuan Xu Jun Huang Xin-Fan He Fei |
| |
| Institution: | State Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China;State Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China;State Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China;State Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China;State Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China;State Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China;State Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China;Wuxi China Resources Huajing Micro Electronics Co. Ltd., Wuxi 214061, China |
| |
| Abstract: | The tunable single electron effect and Coulomb oscillations were observed in Si nanowire transistors. By measuring the channel current as function of applied back-gate and side-gate voltage, the tunable single electron effect and Coulomb oscillations are investigated. From the differential conductance characteristics, the Coulomb diamonds are clearly observed due to the gate voltage-induced quantum dots formation in the Si nanowire. |
| |
| Keywords: | Coulomb oscillations single electron effect silicon nanowire |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
