Morphological evolution of Ge islands on the Si(100) surface: from huts to pits

The morphological evolution on the size and shape of Ge island on the Si(100) surface by depositing and subsequent annealing processes is studied in situ by using scanning tunneling microscopy at ultrahigh vacuum environment. A slower growth rate is maintained when the islands grow to larger sizes beyond the wetting layers. While at room temperature, the epitaxial strain is relieved by the formation of three‐dimensional islands (so‐called ‘hut’ clusters). When the sample is annealed at 200 °C, the strain is relieved by forming pits, having the circular cone shape but with their apex pointing down, with Ge clusters formed at the rim of pits. Copyright © 2016 John Wiley & Sons, Ltd.