Far infrared resonant magnetoabsorption in low density Si inversion layers |
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Authors: | TA Kennedy RJ Wagner BD McCombe DC Tsui |
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Institution: | Naval Research Laboratory, Washington, D.C. 20375, U.S.A.;Bell Laboratories, Murray Hill, NJ 07971, U.S.A. |
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Abstract: | The density and temperature dependences of high frequency/resonant field (61.3 cm-1, 11T) resonant magnetoabsorption data in (100) Si inversion layers at low densities are strikingly different from those observed at lower frequencies/fields. The results, which include a dramatic resonant line narrowing at high fields, are discussed in light of single-electron localization and the possibility of a cooperative electronic transition assisted by the large magnetic field. |
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