采用空心阴极放电等离子体化学气相沉积方法制备a-CH薄膜

 研究了不同衬底-阴极距离、直流电压和H₂流量对a-CH薄膜沉积速率的影响。结果表明：衬底-阴极距离必须大于0.5cm，随着该距离的增加，薄膜的沉积速率减少；直流电压达550V时沉积速率最大；随着H2含量的增加，CH₄含量相对减少，沉积速率随之降低。用AFM观察了以该方法制得的448.4nm CH薄膜的表面形貌，表面粗糙度约为10nm。最后测出了不同条件下CH薄膜的UV-VIS谱，由此可以计算得到薄膜的禁带宽度及折射率。

Production of a-CH films by hollow cathode discharge plasma chemical vapor deposition

This paper describes the principle of plasma chemical vapor deposition (CVD) for fabrication amorphous CH films and factors which influence the deposition rate. The results show that the substrate distance must be more than 0.5cm. But with the increasing of the substrate distance and the H_2 flow (that is to say, the CH_4 content reduses), the deposition rate reduses. When DC voltage is 550V, the deposition rate has a maximum value. By examining the structures and optical properties of a-CH films using atomic force microscopy(AFM) and UV-VIS spectrum, it is indicated that a-CH films grown by means of the hollow cathode discharge plasma CVD are endowed with dense structure, and low-rough surfaces. The rough degree of surface is approximately 10nm. These a-CH films are suitable to be used as ICF targets.