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采用空心阴极放电等离子体化学气相沉积方法制备a-CH薄膜
引用本文:陈志梅,吴卫东,唐永建,许华,唐晓虹,李常明. 采用空心阴极放电等离子体化学气相沉积方法制备a-CH薄膜[J]. 强激光与粒子束, 2004, 16(5): 611-614
作者姓名:陈志梅  吴卫东  唐永建  许华  唐晓虹  李常明
作者单位:中国工程物理研究院,激光聚变研究中心,四川,绵阳,621900;中国工程物理研究院,激光聚变研究中心,四川,绵阳,621900;中国工程物理研究院,激光聚变研究中心,四川,绵阳,621900;中国工程物理研究院,激光聚变研究中心,四川,绵阳,621900;中国工程物理研究院,激光聚变研究中心,四川,绵阳,621900;中国工程物理研究院,激光聚变研究中心,四川,绵阳,621900
基金项目:国家863计划项目资助课题
摘    要: 研究了不同衬底-阴极距离、直流电压和H2流量对a-CH薄膜沉积速率的影响。结果表明:衬底-阴极距离必须大于0.5cm,随着该距离的增加,薄膜的沉积速率减少;直流电压达550V时沉积速率最大;随着H2含量的增加,CH4含量相对减少,沉积速率随之降低。用AFM观察了以该方法制得的448.4nm CH薄膜的表面形貌,表面粗糙度约为10nm。最后测出了不同条件下CH薄膜的UV-VIS谱,由此可以计算得到薄膜的禁带宽度及折射率。

关 键 词:等离子体  化学气相沉积  空心阴极放电  CH薄膜
文章编号:1001-4322(2004)05-0611-04
收稿时间:2003-11-28
修稿时间:2003-11-28

Production of a-CH films by hollow cathode discharge plasma chemical vapor deposition
CHEN Zhi-mei,WU Wei-dong,TANG Yong-jian,XU Hua,TANG Xiao-hong,LI Chang-ming. Production of a-CH films by hollow cathode discharge plasma chemical vapor deposition[J]. High Power Laser and Particle Beams, 2004, 16(5): 611-614
Authors:CHEN Zhi-mei  WU Wei-dong  TANG Yong-jian  XU Hua  TANG Xiao-hong  LI Chang-ming
Affiliation:Research Center of Laser Fusion, CAEP, P.O. Box 919-987, Mianyang 621900, China
Abstract:This paper describes the principle of plasma chemical vapor deposition (CVD) for fabrication amorphous CH films and factors which influence the deposition rate. The results show that the substrate distance must be more than 0.5cm. But with the increasing of the substrate distance and the H_2 flow (that is to say, the CH_4 content reduses), the deposition rate reduses. When DC voltage is 550V, the deposition rate has a maximum value. By examining the structures and optical properties of a-CH films using atomic force microscopy(AFM) and UV-VIS spectrum, it is indicated that a-CH films grown by means of the hollow cathode discharge plasma CVD are endowed with dense structure, and low-rough surfaces. The rough degree of surface is approximately 10nm. These a-CH films are suitable to be used as ICF targets.
Keywords:Plasma  Chemical vapor deposition(CVD)  Hollow cathode discharge  CH films
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