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| Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method | |
| 作者姓名： | 刘波 宋志棠 封松林 CHENBomy |
| 作者单位： | [1]ResearchCentreofFunctionalSemiconductorFilmEngineeringandTechnology.StateKeyLaboratoryofFunctionalMaterialsforInformatics,ShanghaiInstituteofMicrosystemandInformationTechnology,ChineseAcademyofSciences,200050 [2]SiliconStorageTechnology,Inc,1171SonoraCourt,Sunnyvale,CA94086USA |
| 摘 要： | A singie cell element of chalcogenide random access memory was fabricated by using the focused ion beam method.The contact size between the Ge2Sb2Te5 Phase change film and the top electrode film is about 600nm (diameter) and the contact area is caiculated to be 0.28μm^2.The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory.The minimum threshold current of about 0.6mA is obtained. |
| 关 键 词： | 聚焦离子束 电流-电压特征 相位转换薄膜 随机通道记录 薄膜物理 |
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