| Abstract: | The initial stages in the growth of indium phosphide films on gallium arsenide substrates in a chloride gastransport system
are investigated by transmission electron microscopy and electron-diffraction and secondaryion mass spectrometry techniques.
It is shown that decomposition and/or etching of the surface oxide film and formation of a chemically pure substrate surface
occur in the initial stage of the process. The growth islets that form on this surface constitute a solid solution in InP.
A model of the process is proposed.
V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk University. GNPP “NIIPP”. Translated from Izvestiya Vysshikh
Uchebnykh Zavedenii, Fizika, No. 6, pp. 85–90, June, 1996. |
