Determination of the energy diagram of a dielectric-semiconductor structure from the photocharging spectra of the dielectric

The Ge-GeO₂ and Si-SiO₂ structures are investigated by the method of optical charging of traps in the dielectric. It is shown that by measuring the photocharging spectrum in a wide temperature range, one may obtain information on the boundaries of delocalized states of the dielectric as well as on the dimensions of the tails of fluctuation localized states.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 36–40, May, 1982.