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| Design and Fabrication of Schottky Diode with Standard CMOS Process | |
| 作者姓名： | Li Qiang Wang Junyu Han Yifeng and Min Hao |
| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室 上海200433 (李强，王俊宇，韩益锋)，复旦大学专用集成电路与系统国家重点实验室 上海200433(闵昊) |
| 基金项目： | 国家高技术研究发展计划(863计划) |
| 摘 要： | Design and fabrication of Schottky barrier diodes (SBD) with a commercial standard 0.35μm CMOS process are described.In order to reduce the series resistor of Schottky contact,interdigitating the fingers of schottky diode layout is adopted.The I-V,C-V，and S parameter are measured.The parameters of realized SBD such as the saturation current,breakdown voltage，and the Schottky barrier height are given.The SPICE simulation model of the realized SBDs is given. |
| 关 键 词： | CMOS 肖特基二极管 集成 CMOS Schottky diode integration 标准 CMOS Process 工艺集成 肖特基二极管 设计 Standard Schottky Diode Fabrication simulation model Schottky barrier height breakdown voltage parameters saturation current S parameter schottky diode layout order reduce |
Design and Fabrication of Schottky Diode with Standard CMOS Process |
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| Li Qiang,Wang Junyu,Han Yifeng,and Min Hao.Design and Fabrication of Schottky Diode with Standard CMOS Process[J].Chinese Journal of Semiconductors,2005,26(2):238-242. | |
| Authors: | Li Qiang Wang Junyu Han Yifeng MIN Hao |
| Abstract: | |
| Keywords: | CMOS Schottky diode integration |
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