Comments on nonlinearity,response time and polarity reversal in a thermal field emission metal whisker diode |
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Authors: | T E Sullivan A A Lucas P H Cutler |
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Institution: | (1) Department of Engineering Sciences and Mechanics, The Pennsylvania State University, 16802 University Park, PA, USA;(2) Département de Physique, Facultés Universitaires de Namur, B-5000 Namur, Belgium;(3) E.S.I.S., Université de Liège, Institut de Physique, B-4000 Sart Tilman/Liège 1, Belgium;(4) Present address: The Pennsylvania State University, 16802 University Park, PA, USA;(5) Present address: Department of Physics, The Pennsylvania State University, 16802 University Park, PA, USA |
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Abstract: | In a series of recent experiments, research groups have made absolute frequency measurements with laser beams in the infrared
region (μm) using a metal-metal point contact diode for the generation, frequency mixing and detection. At present there are
two models which attempt to explain the rectification mechanism of the diode: 1) Tunneling of electrons through an intermediate
oxide film from whisker to the metal base, i.e., configuration is considered to be a metal-oxide-metal (MOM) tunneling junction.
2) Rectification and nonlinear processes are the result of a thermal enchanced field emission. Such emission is a consequence
of the immersion of the whisker in the laser radiation which results in conduction induced thermionic emission and/or generation
of an electric field at the tip necessary for electron tunneling by field emission. The purpose of this comment is: a) to
discuss qualitatively the basic difference between MOM and TFE theories as regards the origin of the nonlinearity and rectification
properties of the metal point contact junction; b) to review the analyses describing the ultimate frequency response of the
device; and 3) to provide a possible explanation for polarity reversal consistent with the TFE mechanism describing the operation
of the whisker diode.
This research was supported in part by the NATO Research Grants Program, Scientific Affairs, Brussels, Belgium, and under
the auspices of the joint projects ESIS (electronic structure in solids) and IRIS (Institute for Research in Interface Sciences)
of the Belgian Ministry for Science Policy |
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Keywords: | 79 70 42 65 85 60 |
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