Electron spectroscopy of objects for nanoelectronics |
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Authors: | V M Mikushkin |
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Institution: | (1) A. F. Ioffe Physicotechnical Institute, 194021 St. Petersburg, Russia |
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Abstract: | An electron-spectroscopic analysis is made of layered nanostructures and clusters at the surface and in the bulk of a solid.
A new method of forming metal/insulator/semiconductor (superconductor) nanostructures is proposed based on ion-stimulated
metal segregation effects at the surface of low-temperature gallium arsenide and a 123 high-temperature superconductor. The
geometric parameters and electronic structure of these nano-objects are studied. It is shown that their electronic properties
can be controllably varied in situ by acting on the surface. The dimensional transformation of the electronic properties of metal clusters is studied for clusters
in the insulator SiO2, in the superconductor LTMBE-GaAs, and on silicon and graphite surfaces. The nature of this transformation is clarified.
A diagnostics for cluster ensembles is developed by which one can determine the parameters needed to describe singleelectron
transport: the average number of atoms per cluster, the average distance between clusters and isolated atoms, and the chemical
state of the atoms. Ensembles of silver clusters with specified parameters are obtained on a silicon surface. It is shown
that these ensembles are potentially useful for developing single-electron devices.
Zh. Tekh. Fiz. 69, 85–89 (September 1999) |
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