Threshold switching characteristics |
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Authors: | P Esqueda HK Henisch |
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Institution: | Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802, USA |
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Abstract: | The paper describes experiments on thresholds switches, based on a multicomponent chalcogenide glass (Te40As35Ge7Si18) of about 1 μm thickness, and pyrolytic graphite electrodes. The results demonstrate that “forming processes” (of presumably electrolytic character) in the off-state affect only the contact area which is not engaged in filamentary conduction when the switch is in the on-state. The detailed on-state characteristics are shown to depend on (a) the maximum on-current reached during the switching event, and (b) the rate of voltage change, and this is why depend on the external series resistance. Forming processes in the on-state must arise from a very different mechanism, and the operational reality of the minimum holding current has been established. The resultsfavor non-thermal interpretations of threshold switching as such, albeit inevitably with certain “thermal overtones”. |
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