The statistics of nearest neighbor impurity pair formation in semiconductors2

The equilibrium concentrations of doubly ionized, singly ionized and neutral, nearest neighbor pairs of donor-donor and acceptor-acceptor type of impurity pairs have been studied at the temperature of diffusion. In the calculations, the discrete nature of the host lattice and, the internal energies of the pairs have been taken into account. Further, the effect of degeneracy on pair formations was investigated at high levels of doping densities.