Spin-flip Raman scattering from electrons in localized donor states in n-InSb |
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Authors: | H Pascher G Appold HG Häfele |
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Institution: | Physikalisches Institut der Universität Würzburg, Würzburg, Fed. Rep. Germany |
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Abstract: | We report the first observation of spin-flip Raman scattering from electrons localized in shallow donor states in InSb. For a non-degenerate n-InSb sample (8×1013 cm-3) measurements of the spin-flip Raman gain and the effective g-value as a function of the magnetic field show lineshapes and magnetic field dependences completely different to that of an InSb sample with the electron gas being in a degenerate regime (1.35×1015 cm-3). For the 8×1013 cm-3 InSb sample, at magnetic fields greater than 11.5 kG, a splitting of the spin-flip Raman line into two lines is observed which may be an indication that two shallow donor states with different effective g-values are concerned. |
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