Examination of the electronic energy band model for one-dimensional disordered thin films

The nature of the electronic states in a disordered one-dimensional finite system subject to traveling wave boundary conditions is examined. A method is developed whereby these states can be characterized as either “localized” or extended. The concept of localization of states is modified so as to be applicable to amorphous thin films. The extent to which the disorder modifies the band structure of the ordered system is investigated as a function of disorder and the nature of the electronic states is related to the elastic tunneling transmission coefficient for a model metal-semiconductor-metal heterojunction. The results seem to corroborate the Mott-CFO model.