Electron and hole conductivity in CuInS2 |
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Authors: | D.C. Look J.C. Manthuruthil |
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Affiliation: | Physics Department, University of Dayton, Dayton, OH 45469, U.S.A. |
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Abstract: | Single crystals of CuInS2 have been grown from the melt and annealed in In or S to produce good n- or p-type conductivity, respectively. Two donor levels, one shallow and one deep (0.35 eV), and one acceptor level at 0.15 eV are identified. The hole-mobility data are best fitted with an effective mass , which can be explained by simple, two band . theory if the valence band has appreciable d character. Above 300°K, the hole mobility falls rapidly, evidently due to multiband conduction and/or interband scattering between the nondegenerate and degenerate valence bands. The conduction band mobility appears to be dominated, in many samples, by large concentrations ( >1018cm?3) of native donors and acceptors, which are closely compensated. |
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