Electron and hole conductivity in CuInS2

Single crystals of CuInS₂ have been grown from the melt and annealed in In or S to produce good n- or p-type conductivity, respectively. Two donor levels, one shallow and one deep (0.35 eV), and one acceptor level at 0.15 eV are identified. The hole-mobility data are best fitted with an effective mass $\text{m}{}_{\mathrm{<mtext>p</mtext>}}\text{1?1.3m}{}_{\mathrm{e}}$, which can be explained by simple, two band $\text{k}$. $\text{p}$ theory if the valence band has appreciable d character. Above 300°K, the hole mobility falls rapidly, evidently due to multiband conduction and/or interband scattering between the nondegenerate and degenerate valence bands. The conduction band mobility appears to be dominated, in many samples, by large concentrations ( >10¹⁸cm^?3) of native donors and acceptors, which are closely compensated.